Difference between revisions of "Infrared"

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This page focuses on SWIR for IC failure analysis. Note silicon bandgap is 1.14 eV => 1087 nm. General notes:
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{| class="wikitable"
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|+
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!Technology
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!Typical um
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!Typical QE
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@ ~1087 nm
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!Sample cameras
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!Notes
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|-
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|InGaAs
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|0.9 to 1.7
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|
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|SUI goodrich SU320KTSW
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|Very good choice, but relatively high cost
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|-
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|HgCdTe (MCT)
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|
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|
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|Axiom ZephIR
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|
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|-
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|IR vidicon
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|
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|
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|Hamamatsu C2741-03
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FJW Find-R-Scope 85700
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|
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|-
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|Back illuminated CMOS
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|
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|
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|Touptek E3ISPM
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|
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|-
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|Basic CMOS
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|
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|
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|Amscope MU800
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|
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|-
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|Cooled CCD
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|
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|
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|Apogee U2
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|
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|-
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|Basic CCD
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|
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|
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|Shitty mall camera
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|
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|}
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Revision as of 06:42, 23 April 2019

This page focuses on SWIR for IC failure analysis. Note silicon bandgap is 1.14 eV => 1087 nm. General notes:

Technology Typical um Typical QE

@ ~1087 nm

Sample cameras Notes
InGaAs 0.9 to 1.7 SUI goodrich SU320KTSW Very good choice, but relatively high cost
HgCdTe (MCT) Axiom ZephIR
IR vidicon Hamamatsu C2741-03

FJW Find-R-Scope 85700

Back illuminated CMOS Touptek E3ISPM
Basic CMOS Amscope MU800
Cooled CCD Apogee U2
Basic CCD Shitty mall camera


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